| Main contact: | Thierry Guillet |  |
| Other contacts: | Pierre Lefebvre | |
| Thierry Bretagnon | | |
| Bernard Gil | |
Research activities:
Since 1998, our group of spectroscopists studies the optical properties of quantum wells and quantum dots based on nitride semiconductors (GaN and related materials). Our investigations have mainly been devoted to the recombination dynamics in GaN/(Al,Ga)N and (In,Ga)N/GaN heterostructures, emitting in the ultra-violet and visible spectral range. Narrow gap nitride materials, such as Ga(As,N) and GaInAsN (GINA), have also been studied. The spectroscopy of single GaN/AlN quantum dots has recently been investigated by micro-photoluminescence.
During the last years, we also focused our works on ZnO-based heterostructures, an other rapidly developping wide band gap material. We especially study the excitonic properties of ZnO/(Zn,Mg)O quantum wells, as well as the exciton-photon strong coupling in ZnO microcavities.
Finally, the excitonic properties related to the complex conduction and valence bands of semiconductor materials are examined within symmetry-based theories.
This works is developped within the frame of many national and european research contracts.
For more information: see online OECS